By Chuan Seng Tan (auth.), Abbas Sheibanyrad, Frédéric Pétrot, Axel Jantsch (eds.)
Back hide replica sequence: built-in Circuits and platforms 3D-Integration for NoC-based SoC Architectures by means of: (Editors) Abbas Sheibanyrad Frédéric Petrot Axel Janstch This ebook investigates at the grants, demanding situations, and recommendations for the 3D Integration (vertically stacking) of embedded platforms attached through a community on a chip. It covers the full architectural layout strategy for 3D-SoCs. 3D-Integration applied sciences, 3D-Design innovations, and 3D-Architectures have emerged as themes serious for present R&D resulting in a extensive variety of goods. This e-book offers a finished, system-level evaluate of 3-dimensional architectures and micro-architectures. •Presents a finished, system-level review of 3-dimensional architectures and micro-architectures; •Covers the whole architectural layout technique for 3D-SoCs; •Includes state of the art remedy of 3D-Integration applied sciences, 3D-Design thoughts, and 3D-Architectures.
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634, 2001. â•‡ 8. P. P. C. Saraswat, Realistic Copper Interconnect Performance with Technological Constraints. Â€233, 2001. â•‡ 9. G. Emma, Is 3D Chip Technology the Next Growth Engine for Performance Improvement? Â€541, 2008. 10. com 11. E. , Technology and Application of 3D Interconnect. Â€176, 2007. 12. K. , Status and Outlook. S. J. R. Â€333, 2008. 13. N. , Capacitive and Inductive-Coupling I/Os for 3D Chips. S. D. Â€449, 2009. 14. S. Kawamura, N. Sasaki, T. Iwai, M. Nakano, and M. Takagi, Three-Dimensional CMOS ICs Fabricated by Using Beal Recrystallization.
Tn • A_intarch is the interconnect area required for transporting a 32-bit word to memory. 5)a2 (tn) + 8a3 (s) if arch = 2D if arch = 3D2 if arch = 3D4 if arch = 3D8 if arch = 3D16 • σ is the interconnect sharing factor. If σÂ€=Â€1, no sharing takes place and every operator has its own, private interconnect across the system. If σÂ€=Â€0, the interconnect is optimally shared and the interconnect area per operator is 0. In analogy to μS it gives the ratio of area occupied by operators versus interconnect.
Electrochemical and Solid-State Letters, 7(1), pp. G14–G16, 2004. 29. S. Tan, R. Reif, D. Theodore, and S. Pozder, Observation of Interfacial Voids Formation in Bonded Copper Layer. Applied Physics Letters, 87(20), p. 201909, 2005. 30. S. N. Chen, A. Fan, R. Reif, and A. Chandrakasan, Silicon Layer Stacking Enabled by Wafer Bonding. MRS Symposium Proceedings, 970, pp. 193–204, 2007. 31. A. Jourdain, S. Stoukatch, P. De Moor, W. Ruythooren, S. Pargfrieder, B. Swinnen, and E. Beyne, Simultaneous Cu–Cu and Compliant Dielectric Bonding for 3D Stacking of ICs.