Carbon-Based Electronics: Transistors and Interconnects at by Ashok Srivastava, Jose Mauricio Marulanda, Yao Xu, Ashwani

By Ashok Srivastava, Jose Mauricio Marulanda, Yao Xu, Ashwani Sharma

Discovery of one-dimensional fabric carbon nanotubes in 1991 via the japanese physicist Dr. Sumio Iijima has led to voluminous examine within the box of carbon nanotubes for varied functions, together with attainable alternative of silicon utilized in the fabrication of CMOS chips. One fascinating characteristic of carbon nanotubes is that those may be steel or semiconducting with a bandgap looking on their diameter. looking for non-classical units and similar applied sciences, either carbon nanotube-based field-effect transistors and steel carbon nanotube interconnects are being explored widely for rising good judgment units and intensely large-scale integration. even if a number of versions for carbon nanotube-based transistors and interconnects were proposed within the literature, an built-in method of cause them to appropriate with the current simulators is but to be completed. This publication attempts during this course for the carbon-based electronics via basics of solid-state physics and units.

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In addition, depending on which equation is to be used, either Eq. 40) to find the carbon nanotube potential, ycnt,s(L), two regions of operation can be defined as follows: a saturation region for for  DE F E c kT Ie –1  + – – Vds  Vgs –Vfb + f0 – , q q q m    DE F E c kT Ie –1  + – – Vds  Vgs –Vfb + f0 – . q q q m   and a linear region The right hand side of this inequality equation is similar to a saturation voltage in a typical MOSFET and under parenthesis is the threshold voltage, Vth term.

However, transistors will hardly operate beyond this voltage given the low power restrictions of the current CMOS technology [45–47]. 1 Current Equation In a CNT-FET, both diffusion and drift carrier transport mechanisms contribute to the current. We have considered both diffusion and drift transport mechanism since fabricated CNT-FETs [15,22,23] have carbon nanotube lengths longer than the magnitude of the optical phonon mean free path (100 nm) [48,49]. Thus, phonon scattering is present and ballistic transport cannot be considered in such devices.

Dresselhaus, M. , and Avouris, P. (2001). Carbon Nanotube: Synthesis, Properties, Structure, and Applications (Springer Verlag). 12. , and Dekker, C. (1998). Electronic structure of atomically resolved carbon nanotubes, Nature, 391, 59–62. 13. Wong, H. S. P. (2002). Field-effect transistors—from silicon MOSFET to carbon nanotube FETs, Proceedings of 23th International Conference on Microelectronics (MIEL), pp. 103–107. 14. , and McIntyre, P. (2002). IEDM Technical Digest, 711–714. 15. Wind, S. , and Avouris, P.

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