By Worth C.Xr.
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The results are plotted in Fig. 2 and Fig. 3. The traditional method for making this plot is shown in Fig. 2 by using an inverse temperature scale for the x-axis. The additional Fig. 3 is provided here because it is easier to relate the value of the intrinsic carrier concentration to the temperature with it plotted on the xaxis. It is obvious that the intrinsic carrier concentration for silicon carbide is far smaller than for silicon due to the large difference in band gap energy. 7 x 1 0 " cm 3 .
8 P. Brosselard, et al, "Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor", Silicon Carbide and Related Materials, pp. 1129-1132, 2003. K. 1349-1352, 2003. 10 B. J. Baliga, "Evolution of MOS-Bipolar Power Semiconductor Technology", Proceedings of the IEEE, pp. 409-418, 1988. P. Chow, N. Ramaungul, and M. Ghezzo, "Wide Bandgap Semiconductor Power devices", Materials Research Society Symposium, Vol. 483, pp. 89-102, 1998. 12 R. Singh, "Silicon Carbide Bipolar power Devices - Potentials and Limits", Materials Research Society Symposium, Vol.
264-268, pp. 829-832, 1998. Chapter 3 Breakdown Voltage The main advantage of a wide band gap semiconductor for power device applications stems from the very low resistance of the drift region even when it is designed to support larger voltages. The largest voltage that can be supported by a drift region is determined by the onset of impact ionization with increasing electric field within the region. In the previous chapter, it was shown that the onset of impact ionization occurs at much larger electric fields in silicon carbide when compared with silicon.