Current Sense Amplifiers: for Embedded SRAM in by Bernhard Wicht

By Bernhard Wicht

This ebook offers a scientific and accomplished perception into present sensing options. as well as describing theoretical and useful features of present sensing, the writer derives functional layout directions for reaching an optimum functionality via a scientific research of alternative circuit ideas. Voltage experience amplifiers also are thought of, considering that they're used as a last comparator in a present feel amplifier. leading edge suggestions, comparable to reimbursement of the bitline multiplexer and auto-power-down, are elucidated. even supposing the point of interest is on embedded static random entry reminiscence (SRAM), the fabric awarded applies to any current-providing reminiscence variety, e.g. additionally to rising reminiscence applied sciences comparable to MRAM. The e-book will attract layout engineers in and in addition to researchers wishing to profit approximately, and follow, present sensing techniques.

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Extra info for Current Sense Amplifiers: for Embedded SRAM in High-Performance System-on-a-Chip Designs

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Its value is determined by circuit mismatch (asymmetry) and has a significant influence on the speed as well as on the yield of fabricated circuits. The theory behind these important issues is covered in Sect. 2. 1 concludes with a comparison between static and dynamic implementation of sense amplifiers. 2a,b VI and V2 are input and output terminals at the same time. Therefore in voltage sensed SRAMs such a circuit cannot be connected directly to the bitline since the circuit would attempt to discharge the bitline capacitance during the decision phase and increase delay and power.

This means for the design of the sense amplifier that the delay can be adjusted by the sizing of M9 while a desired yield can be achieved by an appropriate value of VI N DC. SO delay and yield can be adjusted independently. 31Jm ......

9. Probability density function of the input offset voltage Vos according to Fig. 8. 5mV, respectively. The variance increases if the output capacitance mismatch deteriorates (parameter ECL). g. :. 15) The distribution of V08 and, consequently Y, is well-defined by just one parameter, the standard deviation O"os of the input offset voltage Vas. The probability density function is plotted in Fig. 9. 15), these curves are not normalized. The required standard deviation O"os can be taken from Fig.

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