Defects, (Hg: Cd)Se, (Hg: Cd)Te by R.K. Willardson and Albert C. Beer (Eds.)

By R.K. Willardson and Albert C. Beer (Eds.)

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Excessive interfacial recombination will be reflected in an anomalously high threshold current density for a given d value because of the lowered internal quantum efficiency. Note that the above discussion concerns the internal quantum efficiency resulting from spontaneous carrier recombination, not stimulated carrier recombination. Therefore, the qi value under discussion particularly impacts the threshold current density, and not directly the differential quantum efficiency in the lasing region where the stimulated emission process (with its shortened carrier lifetime) dominates.

A study of AlGaAs LEDs shows a direct correlation between the number of exposed edges and the degradation rate. The diode structures studied are shown in Fig. 26. Figure 27 shows that the diodes with no exposed edges (Fig. 26a) has the most stable output despite having a high operating current density, whereas the diode with four exposed edges (Fig. , 1977b). A visual examination of the degraded devices showed nonradiative regions extending inward from the sawn edges. Transmission electron microscopy showed that these nonradiative regions consist of dislocation networks which extend from the work-damaged sides onZy into the active region but 1.

The impact of these precipitates on the solar-cell e5ciency varies with their location with respect to the p-n junction. Becuase of the formation of these precipitates in the course of heat treatment, the dispersed Cu is removed from the active region of the device. Therefore, the merage diffusion length in a single-crystalsolar cell may not be reduced. Hence, the short-circuitcurrent density is unaffected by the Cu as long as few precipitates form in the junction spacecharge region. Note that in polycrystalline solar cells, Cu precipitates in grain 1.

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