By Lucia Romano, Vittorio Privitera, Chennupati Jagadish
This quantity, quantity ninety one within the Semiconductor and Semimetals sequence, specializes in defects in semiconductors. Defects in semiconductors support to provide an explanation for a number of phenomena, from diffusion to getter, and to attract theories on fabrics' habit according to electric or mechanical fields.
The quantity comprises chapters focusing particularly on electron and proton irradiation of silicon, aspect defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and masses extra. it is going to support aid scholars and scientists of their experimental and theoretical paths.
- Expert contributors
- Reviews of crucial contemporary literature
- Clear illustrations
- A extensive view, together with exam of defects in numerous semiconductors
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Additional resources for Defects in Semiconductors, Volume 91
The effect of oxidation on anomalous diffusion in silicon. Philos. Mag. 24, 567–576. , 1968. Effects of high phosphorus concentration on diffusion into silicon. J. Electrochem. Soc. 115, 84–88. E. , 2003. Boron uphill diffusion during ultrashallow junction formation. Appl. Phys. Lett. 82, 3647–3649. , 1995. Modeling of the kinetics of dopant precipitation in silicon. J. Electrochem. Soc. 142, 2823–2828. , 1995. Atomistic models of vacancy-mediated diffusion in silicon. J. Appl. Phys. 78 (4), 2362–2366.
1991. Boron and antimony codiffusion in silicon. J. Mater. Res. 6, 2353–2361. , 2008. Modeling and simulation of advanced annealing processes. Mater. Sci. Forum 573–574, 279–293. , 1991. Die Rolle der U Festk€ orper. Exp. Tech. Phys. 39 (2), 169–180. , 1973. On phosphorus diffusion in silicon under oxidizing atmospheres. Solid State Electron. 16, 1419–1421. , 1977. Profiles of phosphorus predeposited in silicon and carrier concentration in equilibrium with SiP precipitates. , Sirtl, E. ), Semiconductor Silicon 1977.
As long as the concentrations of the pairs are negligible in comparison to the total concentration, their concentrations will increase linearly with the oversaturation of the respective intrinsic point defect. Eventually, the concentrations of the pairs will lead to a reduction of the substitutional concentration. Any further increase of concentration of the respective point defect will lead to a sublinear increase of the concentration of the respective impurity pairs. Finally, in case of an extreme oversaturation of the intrinsic 22 Peter Pichler point defects, basically all dopants would be in pairs.